ECH8659
Embossed Taping Speci ? cation
ECH8659-TL-H
No. A1224-5/7
相关PDF资料
ECH8660-TL-H MOSFET N/P-CH 30V 4.5A ECH8
ECH8661-TL-H MOSFET N/P-CH 30V 7A ECH8
ECH8662-TL-H MOSFET N-CH DUAL 40V 6.5A ECH8
ECH8667-TL-H MOSFET P-CH DUAL 30V 5.5A ECH8
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相关代理商/技术参数
ECH8659-TL-HX 制造商:ON Semiconductor 功能描述:NCH+NCH 4V DRIVE SERIES - Tape and Reel
ECH8660 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications
ECH8660_10 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ECH8660-S-TL-H 制造商:ON Semiconductor 功能描述:PCH+NCH 4V DRIVE SERIES - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / PCH+NCH 4V DRIVE SERIES
ECH8660-TL-H 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ECH8661 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications
ECH8661-TL-H 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ECH8662 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications